SiC SBD

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GaN Devices & SiC Devices

SiC SBD

The SiC Schottky Diode series products developed by the third-generation MPS (Merged PiN Schottky Diode) technology ，have the characteristics of low Vf, low turn-on loss, high surge capacity, and fast reverse recovery time, making them suitable for the design of high-frequency switching power supplies. At present, the products of Prisemi includes various packaging forms, including three voltage levels of 650V/1200V/1700V.

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Part Number	VRRM (V)	IR (μA)	VF_Typ. (V)	IF(A) 25℃	IF(A) 160℃	QC (nC)	Package
PSICS8N650V8N	650	60	1.39	19	8	23	DFN5060-8L
PSICS8N650V6N	650	50	1.3	23	6	18	DFN5060-8L
PSICS8N650V10N	650	50	1.3	32	10	27	DFN5060-8L
PSICSTAF1200V40N	1200	50	1.4	59/118	20/40	97	TO-247-3L
PSICS2TAF1700V25N	1700	200	1.4	74	25	324	TO-247-2L
PSICSTAF1200V20N	1200	50	1.4	34/68	10/20	48	TO-247-3L
PSICSTAF1200V30N	1200	150	1.4	39/78	15/30	75.6	TO-247-3L
PSICS2TAF1200V30N	1200	300	1.4	79	30	150	TO-247-2L
PSICS2DP650V2N	650	50	1.3	7.5	2	3.7	TO-252
PSICS2DP650V4N	650	50	1.3	14	4	10.6	TO-252
PSICS2DP650V6N	650	50	1.3	23	6	18	TO-252
PSICS2TO650V6N	650	50	1.3	23	6	18	TO-220-2L
PSICS2TO650V8N	650	50	1.3	30	8	23	TO-220-2L
PSICS2TO650V10N	650	50	1.3	34	10	27	TO-220-2L
PSICS2DP650V10N	650	50	1.3	30	10	28	TO-252
PSICS2TO650V16N	650	100	1.3	47	16	52	TO-220-2L
PSICSTAF650V20N	650	50	1.3	38/76	10/20	27	TO-247-3L
PSICS2TAF650V30N	650	150	1.3	93	30	105	TO-247-2L
PSICSTAF650V40N	650	40	1.35	51/102	20/40	52	TO-247-3L
PSICS2TAF650V40N	650	80	1.35	98	40	64	TO-247-2L
PSICS2DP1200V2N	1200	8	1.35	10	2	12.4	TO-252
PSICS2DP1200V5N	1200	100	1.4	18	5	24	TO-252
PSICS2TO1200V10N	1200	100	1.4	30	10	48	TO-220-2L
PSICS2TO1200V20N	1200	200	1.4	54	20	97	TO-220-2L
PSICS2TAF1200V20N	1200	200	1.4	54	20	97	TO-247-2L