Gallium nitride devices, with their unique device characteristics, have played an increasingly important role in the field of fast charging. However, the gate voltage of traditional gallium nitride devices is very special, and the gate threshold voltage is extremely low. A gate voltage of about 1V can partially conduct; The gate withstand voltage is only about 6V. In order to cooperate with traditional power controllers, engineers need to configure complex level conversion circuits at the gate, which is very inconvenient to use.

Figure 1: Traditional gallium nitride devices require gate placement
Configure complex level conversion circuits

Xindao Technology is facing the pain points of customer use and launching a new generation of direct drive E-Mode gallium nitride power IC. The product integrates a driver circuit internally, allowing traditional power controllers to drive directly without the need for complex level conversion circuits.

Figure 2 shows PGD7115 as a direct drive GaN power IC
No need to configure complex level conversion circuits

PDG7115 eliminates the need for external level conversion circuits, which not only reduces the cost of system components, but also significantly reduces the interference of parasitic inductance and capacitance on the gate of gallium nitride power devices, preventing the risk of ringing overvoltage breakdown of the gate of gallium nitride.

The internal gallium nitride device of PDG7115 is directly controlled by PWM signals and is compatible with digital logic levels of 5V/15V. The built-in driver circuit can accurately saturate and turn off power devices after logic level flipping, avoiding the risk of gallium nitride misleading on and off.

PDG7115 is a 650V 160m Ω gallium nitride power IC, packaged in DFN5 * 6, which is very suitable for customers to build compact 65W PD chargers or other high-density power supplies.

Xindao Technology will also simultaneously release 650V 300m Ω PDG7113650V 110m Ω PDG7117. These products, along with the previously released discrete gallium nitride device PFH8FN65R110/160/300, form Xindao Technology’s gallium nitride product matrix, enabling Xindao Technology to support customers in the design and procurement of gallium nitride chips in the full range and power range.

Xindao Technology has been focusing on third-generation semiconductors for many years, emphasizing the localization layout of related processes, supply chains, and products. Xindao Technology has started from the source, leveraging its advantages in power device and process improvement over the years, and collaborating with mature manufacturing and packaging plants in the industry, committed to contributing to expanding and ensuring the security of customers’ gallium nitride supply chain.